Semiconductor integrated circuit device and a method of producing the same

ABSTRACT

A semiconductor integrated circuit device having a read-only memory which comprises a plurality of first gate electrodes arranged on a semiconductor substrate in a first direction maintaining a predetermined distance, a plurality of second gate electrodes that are arranged among said first gate electrodes and are partly overlapped on said first gate electrodes, and regions of data-writing impurities positioned under the first and second gate electrodes. The impurities for writing data are introduced through the first or second gate electrodes using the overlappings of the first and second gate electrodes as masks.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor integrated circuitdevice and a method of producing the same. More specifically, theinvention relates to a semiconductor integrated circuit device having amask ROM and to technology that can be effectively adapted to a methodof producing the same.

The mask ROM's include a lateral mask ROM that is advantageous forhigh-speed operation and a vertical mask ROM that is advantageous forbeing highly densely integrated.

In the field of vertical mask ROM, a double-layer gate structure(multi-gate structure) has been employed for the purpose ofaccomplishing a highly dense integration. The vertical mask ROM of thedouble-layer gate structure has been disclosed in Japanese PatentLaid-Open No. 41188/1978.

The double-layer gate structure consists of second gate electrodesarranged among the first gate electrodes arranged in the direction ofthe gate length maintaining a predetermined distance. The first gateelectrodes are composed of a gate electrode material (polycrystallinesilicon film) of the first layer, and the second gate electrodes arecomposed of a gate electrode material (polycrystalline silicon film) ofthe second layer. Ends of the first gate electrodes and ends of thesecond gate electrodes have been overlapped by amounts that correspondto margin for aligning the mask in the step of manufacturing.

The thus constituted vertical mask ROM makes it possible to eliminate aportion that corresponds to the source region or the drain regionbetween the first gate electrodes and the second gate electrodes. Thatis, the vertical mask ROM of this type enables the areas of the memorycell array to be reduced in the direction of gate length and, hence,enables the degree of integration to be increased.

The data are written onto the vertical mask ROM prior to forming thefirst gate electrodes and the second gate electrodes. That is, the dataare written onto the vertical mask ROM in a way as described below.

First, impurities for writing data are selectively introduced into thechannel forming regions in the main surface of a semiconductorsubstrate. The impurities for writing data form depletion-type MISFET ofa conductivity type opposite to that of the semiconductor substrate.

Then, first gate electrodes and second gate electrodes are formed inpositions in a region where the impurities for writing data areintroduced.

SUMMARY OF THE INVENTION

The present inventor has studied the above-mentioned technology and hasfound problems as described below.

In the vertical mask ROM in which the data have been written prior toforming the gate electrodes, extended periods of time are required forcompleting the product after the data have been written into the ROM.

In the vertical mask ROM, furthermore, the first gate electrodes and thesecond gate electrodes must be formed in positions in the region inwhich are introduced impurities for writing data. Therefore, the gatesin the direction of gate length and/or the size of the region in whichare introduced impurities for writing data must have a margin by takinginto consideration the masking deviation between the region in which areintroduced impurities for writing data and the first and second gateelectrodes. Because of the above reasons, the integration degree of thevertical mask ROM cannot be decreased.

Furthermore, the masking deviation results in a deviation between thegates and the channel regions causing the gate length to besubstantially changed. Therefore, the mutual conductance gm of a MISFETconstituting a memory cell undergoes the change. Namely, erroneousoperation takes place in reading out the data. Variance in the mutualconductance gm that depends upon the manufacturing process causes thevertical mask ROM in which the memory cells are connected in series tooperate erroneously.

The object of the present invention is to provide technology which iscapable of reducing the time required from the writing of data to thecompletion of the product in a semiconductor integrated circuit devicehaving vertical mask ROM.

Another object of the present invention is to provide technology whichis capable of reducing the areas occupied by the memory cells toincrease the degree of integration in a semiconductor integrated circuitdevice having vertical mask ROM.

A further object of the present invention is to provide technology whichdoes not permit the mutual conductance gm of MISFET that constitutes amemory cell to change irrespective of the manufacturing processes forproducing semiconductor integrated circuit devices having vertical maskROM.

The above and other objects of the present invention as well as novelfeatures thereof will become obvious from the description of thespecification and the accompanying drawings.

Among the inventions disclosed in the present application, arepresentative example will be briefly described below.

That is, in a semiconductor integrated circuit device of thedouble-layer gate structure having vertical mask ROM, first gateelectrodes and second gate electrodes are successively formed, and thenimpurities for writing data are introduced into a channel-forming regionthrough a predetermined first gate and/or a second gate electrodethereby to write data.

Further, the impurities for writing data are introduced without passingthrough a portion where the end of the first gate electrode and the endof the second gate electrode are overlapped.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of an equivalent circuit of a memory cell portionand a peripheral portion thereof in a vertical mask ROM according to thepresent invention;

FIG. 2 is a plan view illustrating a major portion of the memory cellarray in the vertical mask ROM according to the present invention;

FIG. 3 is a section view illustrating a major portion of memory cellconstitution in the vertical mask ROM according to the presentinvention;

FIGS. 4 to 8 are section views illustrating major portions in each ofthe manufacturing steps for explaining a method of producing thevertical mask ROM according to the present invention;

FIGS. 9 and 10 illustrate another embodiment of a method of producingthe vertical mask ROM according to the present invention;

FIG. 11 is a block diagram of a microcomputer on which is mounted thevertical mask ROM of the present invention; and

FIG. 12 is a diagram showing on an enlarged scale the channel portionsof MISFET's M₁ to M₄ of memory cells.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 is a diagram of an equivalent circuit of the vertical mask ROMaccording to the present invention.

Referring to FIG. 1, a memory cell array in the vertical mask ROM havearranged therein memory cells M1 to M8 that are composed of MIScapacities or MISFET's (hereinafter simply referred to as MISFET's). Thememory cells Ml to M8 are connected in series. Memory cells M1 to M8 ofa number of eight (or 16, 32, . . . ) constitute a unit memory cell rowconsisting of eight bits (or 16 bits, 32 bits, . . . ).

The memory cell M consists of a MISFET of the depletion type (firstthreshold voltage) that forms data "0" or of the enhancement type(second threshold voltage) that forms data "1". Word lines WL thatextend in the direction of column are connected to the gate electrodesof the memory cells M1 to M8, such that the memory cells M are renderedconductive or nonconductive. Each word line WL is connected at its oneend to an X-decoder circuit Xdec.

The memory cell M1 in the unit memory cell row is connected to a dataline DL that extends in the row direction. Concretely speaking, thedrain of a MISFET that constitutes the memory cell M1 is connected tothe data line DL that extends in the row direction, and the gateelectrode thereof is connected to a power source voltage Vcc via aprecharging MISFET Qpc that receives a precharge signal φpc. The powersource voltage Vcc may be, for example, 5 volts to operate the circuit.The data lines DL are connected at the ends on one side to a common dataline CD via MISFET's Qs that constitute column switches. The gateelectrodes of MISFET's Qs are connected to a Y-decoder circuit Ydec. Thesource of MISFET that constitutes memory cell M8 at the other end of thememory cell row is connected to a reference voltage Vss. The referencevoltage Vss is, for example, ground potential (0 volt) of the circuit.As will be described later, the power source voltage Vcc and thereference voltage Vss are commonly provided for a plurality of unitmemory cell rows that are arranged in the column direction, andconstitute wiring for power source voltage and wiring for referencevoltage, respectively.

Each pair of unit memory cell rows form a symmetrical shape in the rowdirection with the precharging MISFET Qpc as a center. Each pair of unitmemory cell rows are arranged in the column direction maintaining thesame pattern to constitute the memory cell array.

FIG. 2 is a section view showing a major portion of the memory cellarray in the vertical mask ROM according to the present invention, andFIG. 3 is a section view along the line III--III of FIG. 2.

Referring to FIGS. 2 and 3, the vertical mask ROM is constituted by a p⁻-type semiconductor substrate (or a well region) 1 composed of singlecrystalline silicon. A field insulating film 2 and a p-type channelstopper region 3 are provided on the main surface between thesemiconductor element-forming regions of the semiconductor substrate 1.

The vertical mask ROM include memory cells M₁, M₃, M₅, M₇ of odd-numbercolumns constituted by the semiconductor substrate 1, a gate insulatingfilm 4 and a gate electrode 5, and memory cells M₂, M₄, M₆, M₈ ofeven-number columns constituted by the semiconductor substrate 1, a gateinsulating film 6 and a gate electrode 7. That is, the memory cell has aMIS structure which contains neither a semiconductor region thatcorresponds to the source region nor a semiconductor region thatcorresponds to the drain region of MISFET.

The gate electrodes 5 of memory cells M of odd-number columns arearranged maintaining a predetermined distance in the direction of gatelength (direction of row in FIG. 2). The gate electrodes 5 are formed ina step of forming gate electrode of a first layer. The gate electrodes 5are composed of, for example, a polycrystalline silicon film having athickness of about 2000 to 3000 angstroms. Or, the gate electrodes 5 maybe composed of a single layer of a high-melting metal silicide (MoSi₂,WSi₂, TaSi₂, TiSi₂) film or of a high-melting metal (Mo, W, Ta, Ti)film, or may be composed of a composite film obtained by laminating ametal film on the polycrystalline silicon film. For example, when apolysilicide film is obtained by laminating a high-melting metalsilicide film on a polycrystalline silicon film, the polycrystallinesilicon film should have a thickness of from 1500 to 2000 angstroms andthe high-melting metal silicide film should have a thickness of from1500 to 3000 angstroms.

The gate electrodes 7 of memory cells M of even-number columns arearranged among the first gate electrodes 5. Ends of the gate electrodes7 are overlapped on the ends of the gate electrodes 5 by an amount thatcorresponds to a size of masking margin (e.g., about 0.5 μm) in the stepof forming the gate electrodes 5. The gate electrodes 7 are formed in astep of forming gate electrodes of a second layer. For instance, thegate electrodes 7 are composed of a material equivalent to that of thegate electrodes 5 and maintaining a thickness substantially the same asthat of the gate electrodes 5.

The gate electrodes 5 and the gate electrodes 7 are electricallyisolated from each other by an interlayer insulating film (e.g., siliconoxide film) that is not denoted by numeral but that is formed on thesurface of the gate electrodes 5.

Data are written onto memory cells M₃ and M₇ among the memory cells M ofodd-number columns, and onto memory cells M₂ and M₄ among the memorycells M of even-number columns. In the memory cells M onto which dataare written, impurities for writing data are introduced into thechannel-forming region in the main surface of the semiconductorsubstrate 1 (in practice, this region is heat-treated to constitute ap-type semiconductor region) The memory cell M has been formed inadvance (prior to writing data) by a threshold voltage of the depletiontype; however, the threshold voltage is changed into the enhancementtype by the introduction of impurities 9 for writing data.

The MISFET Qpc for selecting the above-mentioned eight stages of memorycells M is constituted by the semiconductor substrate 1, gate insulatingfilm 4, gate electrode 5 (or 7), and a pair of n⁺ -type semiconductorregions 8 used as a source region and the drain region. The memory cellsM are formed by nearly the same step as the one for forming MISFET Qpc.The ground potential wiring Vss is constituted by the semiconductorregion 8.

A bit line 12 is connected to one semiconductor region 8 of the MISFETQpc through a connection hole 11 formed in the interlayer insulatingfilm 10. The interlayer insulating film 10 is formed, for example, by acomposite film obtained by forming a BPSG film on a silicon oxide filmformed by the CVD method. The bit line 12 is formed by an aluminum film,or a laminated film of an aluminum alloy to which Cu and/or Si are addedand a high-melting metal silicide layer.

The method of producing the thus constituted vertical mask ROM and themethod of writing data will now be described briefly in conjunction withFIGS. 4 to 8 (section views showing major portions for each of themanufacturing steps).

First, a p⁻ -type semiconductor substrate 1 composed of singlecrystalline silicon is prepared. The semiconductor substrate 1 has asurface concentration of about 1×10¹² to 2×10¹² [atoms/cm² ].

Next, a field insulating film 2 and a p-type channel stopper region 3are formed on the main surface between the semiconductor element-formingregions of the semiconductor substrate 1.

Then, impurities 13 for adjusting the threshold voltage are introducedinto the main surface of the MISFET-forming region in the semiconductorsubstrate 1. The impurities 13 may be As⁺ ions that are implanted in anamount of, for example, about 2×10¹² to 3×10¹² [atoms/cm² ]at about 60to 100 [KeVj]. Owing to the introduction of impurities 13, the thresholdvoltage is adjusted to that of the depletion type.

Referring to FIG. 4, a gate insulating film 4 is formed on the memorycell M-forming region and on the MISFET Qpc-forming region of thesemiconductor substrate 1. The gate insulating film 4 is composed of asilicon oxide film formed by thermally oxidizing the main surface of thesemiconductor substrate 1 at a temperature of 850° to 900° C., and has athickness of about 125 to 300 angstroms.

Referring to FIG. 5, gate electrodes (first gate electrodes) 5 areformed on predetermined portions on the gate insulating film 4 by thestep of forming gate electrodes of the first layer. The gate electrodes5, in this case, are composed of a single layer of polycrystallinesilicon film. The polycrystalline silicon film is formed by the CVDmethod. Prior to subjecting the polycrystalline silicon film to thepatterning to form gate electrodes, the phosphorus concentration thereinis set to be about 1×10²⁰ [atoms/cm⁻³ ] by the treatment or implantationwith phosphorus ions. Thereafter, the gate electrodes 5 are formed toform memory cells M of odd-number columns.

Next, the surface of the semiconductor substrate and the surface of thegate electrodes are thermally oxidized at 850° to 900° C. to form asilicon oxide film on the surface of the semiconductor substratemaintaining a thickness of 125 to 300 angstroms and to form a siliconoxide film on the surfaces of gate electrodes maintaining a thickness of1000 to 2000 angstroms. The oxidiation is effected utilizing the factthat the rate of oxidation of the polycrystalline silicon film in whichphosphorus ions are introduced is greater than that of the surface ofthe semiconductor substrate. A thick silicon oxide film is formed on thesurfaces of gate electrodes because of the reason that the silicon oxidefilm serves as an interlayer insulating film relative to the gateelectrodes of the second layer to decrease the capacity that is formedrelative to the gate electrodes of the second layer.

Referring to FIG. 6, the gate electrodes (second gate electrodes) 7 areformed on the gate insulating film 6 by the step of forming gateelectrodes of the second layer. The gate electrodes 7 are composed ofthe polycrystalline silicon film in a manner as described above and havethe same thickness at the gate electrodes of the first layer. Ends ofthe gate electrodes 7 are overlapped on the ends of the gate electrodes5 by an amount that corresponds to the size of masking margin in themanufacturing step. By forming the gate electrodes 7, memory cells M ofeven-number columns are formed.

After the gate electrodes are formed, the surfaces of gate electrodesand the surface of the semiconductor substrate are thermally oxidized toform silicon oxide films maintaining thicknesses of about 500 angstromsand 100 to 200 angstroms, respectively.

Next, using the gate electrodes 5 and 7 as masks for introducingimpurities, n⁺ -type semiconductor regions 8 are formed on the mainsurface of the semiconductor substrate 1 as shown in FIG. 7. Thesemiconductor regions 8 are formed by implanting As⁺ ions or P⁺ ions inamounts of 5×10¹⁵ to 1×10⁶ [atoms/cm² at 80 KeV or 60 KeV. Owing to theformation of semiconductor regions 8, the MISFET Qpc for selectingmemory cells is formed (similarly, a MISFET is also formed forconstituting the peripheral circuit).

Next, the step of writing data is effected. First, a mask 14 is formedon the whole surfaces of the gate electrodes 5 and 7 to introduceimpurities for writing data. The mask 14 for introducing data-writingimpurities has openings 14A for exposing the surfaces of the gateelectrodes 5 or the gate electrodes 7. As shown in FIG. 8, the innerwalls of the opening 14A in the direction of gate length are so formedas will be positioned in a region (within the size of masking margin ina manufacturing step) in which an end of the gate electrode 5 and an endof the gate electrode 7 are overlapped on each other. Further, the innerwalls of the opening 14A in the direction of gate width are so formed aswill be positioned on the outside of the gate width of the memory cell Mby an amount at least corresponding to the size of masking margin in themanufacturing steps. The mask 14 for introducing the data-writingimpurities is composed of, for example, a photoresist film.

Using the mask 14 for introducing data-wiring impurities as shown inFIG. 8, impurities 9 for writing data are selectively introduced intothe channel-forming regions under the gate electrodes 5 or the gateelectrodes 7 through gate electrodes 5 of memory cells M of odd-numbercolumns or through gate electrodes 7 of memory cells M of even-numbercolumns that are exposed through the openings 14A. The impurities 9 forwriting data are composed of B⁺ ions that are implanted at aconcentration of about 7×10¹² to 9×10¹² [atoms/cm² with the energy ofabout 140 to 160 KeV. When the gate electrodes are composed of apolysilicide, the energy for ion implantation is from 140 to 300 KeV.Under such conditions, a maximum concentration of impurities 9 forwriting data can be set in the channel-forming regions under the gateelectrodes 5 and/or the gate electrodes 7. The impurities 9 for writingdata are not introduced into the main surface of the semiconductorsubstrate 1 under the portions where the ends of the gate electrodes 5and the ends of the gate electrodes 7 are overlapped since the film atsuch portions have a large thickness. That is, the impurities 9 forwriting data are defined by the mask 14 for introducing data-writingimpurities and by the overlapped portions, and are introduced into thechannel-forming regions in a self-aligned manner under the gateelectrodes 5 and/or the gate electrodes 7. The impurities for writingdata are activated by the heat-treatment after they have beenintroduced. Introduction of impurities 9 for writing data changes thethreshold voltage of the memory cell M from that of the depletion typeto that of the enhancement type.

Described below in conjunction with FIG. 12 is a relationship betweenthe impurity region 19 constituted by impurities for writing dataactivated by the heat-treatment after they have been introduced and thegate electrodes of the first and second layers. FIG. 12 illustratesMISFET's M₁ to M₄ which constitute part of the memory cells. Here, theimpurity region is not shown that is constituted by impurities that areintroduced for forming depletion-type MISFET's.

To form MISFET's of the enhancement-type, ions are implanted fromportions denoted by "L" in FIG. 12. Impurities implanted in the surfaceof the semiconductor substrate are diffused by the heat-treatment foractivation, i.e., diffused by an equal distance "w" in the direction ofgate length. If explained with reference to, for example, MISFET M₃,both ends of the impurity region 19 are located at an equal distance inthe direction of gate length from the ends of the gate electrode of thesecond layer. If an imaginary line c is presumed to exist midway betweenthe ends of the neighboring gate electrodes of the second layer, ends ofthe impurity layer 19 exist at positions on both sides of the imaginaryline c being separated away therefrom by an equal distance B.

Thus, in a semiconductor integrated circuit device having a verticalmask ROM of the double-layer gate structure, the gate electrodes 5 andgate electrodes 7 are successively formed, impurities 9 are introducedinto the channel-forming regions through predetermined gate electrodes 5and/or gate electrodes 7 to write data after the gate electrodes 5 andgate electrodes 7 have been formed. Therefore, the vertical mask ROM canbe produced within reduced periods of time.

Further, impurities 9 for writing data are introduced without passingthrough portions where the ends of the gate electrodes 5 and the ends ofthe gate electrodes 7 are overlapped. That is, being defined by theoverlapped portions, the impurities 9 for writing data are introducedinto the channel-forming regions under predetermined gate electrodes 5and/or gate electrodes 7 only. Thus, the impurities 9 for writing dataare introduced being self-aligned to the gate electrodes 5 and/or thegate electrodes 7. That is, the area of the memory cell M can be reducedin the direction of gate length, enabling the integration degree of thevertical mask ROM to be increased.

The channel length of a MISFET, e.g., M₃ constituted by the gateelectrodes of the first layer is determined by a distance between thegate electrodes of MISFET's M₂ and M₄. Therefore, the channel lengthdoes not change irrespective of the masking deviation; i.e., a constantchannel length is obtained. In other words, a constant mutualconductance gm is obtained at all times.

The channel length of a MISFET, e.g., M₂ constituted by the gateelectrodes of the second layer is determined by a distance between thegate electrodes of the MISFET's M₁ and M₃. Therefore, a MISFET having aconstant mutual conductance gm is obtained as described above.

After the step of writing data, the mask 14 for introducing thedata-writing impurities is removed.

Then, an SiO₂ film is formed maintaining a thickness of 1500 angstromsand a BPSG (boron phosphosilicate glass) film is formed maintaining athickness of 400 angstroms by the CVD method in order to form aninterlayer insulating film 10 and connection holes 11 successively.Thereafter, bit lines 12 are formed as shown in FIGS. 2 and 3, and aplasma nitride film is formed thereon maintaining a thickness of 1.2 μmto complete the vertical mask ROM of the double-layer gate structure inaccordance with the embodiment. The bit lines are comprised of amolybdenum silicide film having a thickness of 150 to 300 angstroms andan aluminum film having a thickness of 8000 angstroms formed thereon.

In the vertical mask ROM of the present invention, the step of writingdata may be carried out after the interlayer insulating film 10 or thebit line 12 has been formed. Described below is an embodiment in whichthe step of writing data is executed after the bit lines 12 have beenformed.

After the steps have been finished up to FIG. 7 in the above-mentionedembodiment, an interlayer insulating film composed of CVD-SiO₂ of athickness of about 1500 angstroms and BPSG of a thickness of about 4000angstroms is formed as shown in FIG. 9 without effecting the step ofwriting data. Then, a connection hole 11 is formed in the drain regionof MISFET Qpc. Thereafter, there are formed bit lines composed of amolybdenum silicide film having a thickness of 150 to 300 angstroms andan aluminum film that contain Cu and Si having a thickness of 8000angstroms formed thereon. Further, a protection film composed of silaneis formed by the CVD method maintaining a thickness of 1000 to 2000angstroms. Like FIG. 3, FIG. 9 is a section view along the line III--IIIof FIG. 2.

Next, the mask 14 for introducing data-writing impurities is formed onthe protection film 15. Referring to FIG. 10, the impurities 9 forwriting data are introduced into the channel-forming regions ofpredetermined memory cells M through openings 14A in the mask 14 therebyto write data. The data are written by implanting, for example, B⁺ ionsat a concentration of about 7×1012 to 9×10¹² [atoms/cm² with the energyof about 300 KeV. The mask 14 for introducing impurities for writingdata is composed of a photoresist film.

The protection film 15 is formed so as to withstand the washing in thesteps of applying a photoresist film, developing and peeling, as well asto withstand the wet processing such as treatment with a developingsolution and treatment with a peeling solution. That is, the protectionfilm 15 is formed such that the bit lines 13 composed of aluminum or analloy thereof will not be corroded.

In particular, when copper is added to the bit lines 13 to decreasemigration thereof, corrosion easily takes place in the aluminum alloy.The protection film of the present invention is particularly effectivefor the vertical mask ROM that uses aluminum alloy containing copper.

The protection film is in no way limited to the silane film only, butmay be, for example, a nitride film or a polycrystalline silicon film.

After the data are written, the mask 14 for introducing the data-writingimpurities is removed. Next, a passivation film composed, for example,of a plasma nitride film is formed maintaining a thickness of about 1.2μm on the protection film 15. Thereafter, the data-writing impurities 9introduced in the step of writing the data are activated.

According to this embodiment, the time for completing the productmentioned in the foregoing embodiment can be further shortened.

FIG. 11 is a block diagram of a microcomputer to which the vertical maskROM of the present invention is adapted.

In FIG. 11, reference numeral 17 denotes a semiconductor substrate(chip) composed of p⁻ -type single crystalline silicon having aplurality of bonding pads 18 arranged around the periphery thereof. Aninput/output circuit region I/O is provided on the inside of the bondingpads 18. The chip 17 shown in FIG. 11 contains a micro ROM, a CPU(central processing unit), an SCI (serial communication interface), anA/D (analog-digital converter) circuit, a dual-RAM (dual port randomaccess memory), a RAM, a ROM, a timer 1, a timer 2 and a timer 3.

With the vertical ROM of the present invention being adapted to themicro ROM and or ROM, the time can be reduced from the step of writingdata to the completion of the product.

In the foregoing was concretely described the invention accomplished bythe present inventor by way of embodiments. The invention, however, isin no way limited to the aforementioned embodiments only but can bemodified in a variety of other ways without departing from the spiritand scope of the invention.

What is claimed is:
 1. A method of producing semiconductor integratedcircuit devices, comprising:(a) a step for introducing impurities intothe surface of a semiconductor material having a first type ofconductivity, said impurities having a second type of conductivity thatis opposite to said first type of conductivity; (b) a step for forming aplurality of first conductive layers maintaining an equal distance onthe surface of said semiconductor material; (c) a step for forming aplurality of second conductive layers among said plurality of firstconductive layers on the surface of said semiconductor material, in sucha manner that said second conductive layers are partly overlapped onsaid first conductive layers; (d) a step for forming a masking layerhaving openings at positions corresponding to particular ones of saidplurality of first conductive layers or said plurality of secondconductive layers; and (e) a step for selectively introducing impuritiesof the first conductivity type into the openings utilizing said maskinglayer;wherein said first and second conductive layers constitute gateelectrodes of MISFET's that are connected in series.
 2. A method ofproducing semiconductor integrated circuit devices according to claim 1,wherein said impurities having the first conductivity type areintroduced through the first or the second conductive layers into thesurface of said semiconductor material of the regions other than thoseregions where said first conductive layers and said second conductivelayers are overlapped.
 3. A method of producing semiconductor integratedcircuit devices according to claim 2, further comprising:a step forforming a thermal oxide film on the surface of said semiconductormaterial prior to forming said first conductive layers.
 4. A method ofproducing semiconductor integrated circuit devices according to claim 3,further comprising:a step for forming a thermal oxide film on thesurfaces of said first conductive layers and said semiconductor materialbetween said steps (b) and (c).
 5. A method of producing semiconductorintegrated circuit devices according to claim 4, further comprising:astep for introducing impurities having the second conductivity type intoends on both sides of said first and second conductive layers that arecontinuously formed using said first or second conductive layers asmasks, after said step (c) has been finished.
 6. A method of producingsemiconductor integrated circuit devices, comprising:(a) a step forintroducing impurities into the surface of a semiconductor materialhaving a first type of conductivity, said impurities having a secondtype of conductivity that is opposite to said first type ofconductivity; (b) a step for forming a plurality of first conductivelayers maintaining an equal distance on the surface of saidsemiconductor material; (c) a step for forming a plurality of secondconductive layers among said plurality of first conductive layers on thesurface of said semiconductor material, in such a manner that saidsecond conductive layers are partly overlapped on said first conductivelayers; (d) a step for forming a first insulating film on saidsemiconductor material and on the first and second conductive layers;(e) a step for selectively forming a third conductive layer on saidfirst insulating film; (f) a step for forming a second insulating filmon said first insulating film and on said third conductive layer; (g) astep for forming a masking layer on said second insulating film; (h) astep for selectively removing said masking layer using said secondinsulating film as an etching preventing film; and (i) a step forselectively introducing impurities of the first type of conductivityinto the openings utilizing said masking layer;wherein said first andsecond conductive layers constitute gate electrodes of MISFET's that areconnected in series.
 7. A method of producing semiconductor integratedcircuit devices according to claim 6, wherein said impurities having thefirst conductivity type are introduced through the first or the secondconductive layers into the surface of said semiconductor material of theregions other than those regions where said first conductive layers andsaid second conductive layers are overlapped.
 8. A method of producingsemiconductor integrated circuit devices according to claim 7, furthercomprising:a step for forming a thermal oxide film on the surface ofsaid semiconductor material prior to forming said first conductivelayers.
 9. A method of producing semiconductor integrated circuitdevices according to claim 8, further comprising:a step for forming athermal oxide film on the surfaces of said first conductive layers andsaid semiconductor material between said steps (b) and (c).
 10. A methodof producing semiconductor integrated circuit devices according to claim9, further comprising:a step for introducing impurities having thesecond conductivity type into ends on both sides of said first andsecond conductive layers that are continuously formed using said firstor second conductive layers as masks, after said step (c) has beenfinished.
 11. A method of producing semiconductor integrated circuitdevices according to claim 10, wherein the step of forming said firstinsulating film consists of a step of forming a silicon oxide film and astep of forming a BPSG.
 12. A method of producing semiconductorintegrated circuit devices according to claim 10, wherein the step offorming said third conductive layer consists of a step of forming ahigh-melting metal silicide layer and a step of forming an aluminumalloy layer.